发明名称 |
SEMICONDUCTOR DEVICES FORMED OF III-NITRIDE COMPOUNDS, LITHIUM-NIOBATE-TANTALATE, AND SILICON CARBIDE |
摘要 |
Semiconductor devices formed by depositing III-nitride compounds on lithium niobate and/or lithium tantalate substrates are disclosed. Also disclosed, are semiconductor devices formed by depositing lithium niobate and/or lithium tantalate on III-Nitrides and Silicon Carbide substrates. The semiconductor devices provide good lattice matching characteristics between the substrate and the material that is deposited upon the substrate. The method of forming such semiconductor devices, which is also disclosed, enables fabrication of periodically-poled devices in a manner that is advantageous in comparison to existing technologies. |
申请公布号 |
WO03071605(A3) |
申请公布日期 |
2007.11.29 |
申请号 |
WO2003US04472 |
申请日期 |
2003.02.14 |
申请人 |
GEORGIA TECH RESEARCH CORPORATION |
发明人 |
DOOLITTLE, WILLIAM, ALAN |
分类号 |
H01L29/24;H01L21/20;H01L29/04;H01L29/20;H01L29/267;H01L31/0304;H01L33/00;H01L33/32 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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