Chemical mechanical polishing pad for planarizing semiconductor, optical and magnetic substrates, comprises a polymeric matrix having a top polishing surface including polymeric polishing asperities/forming polymeric polishing asperities

摘要

The chemical mechanical polishing pad for planarizing semiconductor, optical and magnetic substrates, comprises a polymeric matrix (12) having a top polishing surface (14) including polymeric polishing asperities (16) or forming polymeric polishing asperities upon conditioning with an abrasive. The polymeric polishing asperities extend from the polymeric matrix and are a portion of the top polishing surface that can contact a substrate. The polishing pad forms additional polymeric polishing asperities from the polymeric matrix. The chemical mechanical polishing pad for planarizing semiconductor, optical and magnetic substrates, comprises a polymeric matrix (12) having a top polishing surface (14) including polymeric polishing asperities (16) or forming polymeric polishing asperities upon conditioning with an abrasive. The polymeric polishing asperities extend from the polymeric matrix and are a portion of the top polishing surface that can contact a substrate. The polishing pad forms additional polymeric polishing asperities from the polymeric matrix with wear or conditioning of the top polishing surface. The polymeric polishing asperities are a polymeric material having 45 wt.% hard segment and a bulk ultimate tensile strength of 14,000 psi (44.8-96.5 MPa). The polymeric matrix has a two phase structure of a hard phase and a soft phase. The two phase structure has an average area of the hard phase to average area of the soft phase ratio of less than 1.6. The polymeric matrix has 50-80 wt.% of hard segment. The polymeric matrix is from the reaction product of a curative agent and an isocyanate-terminated polymer. The curative agent contains curative amines that cure the isocyanate-terminated reaction product. The soft phase has an average length measured in cross section of 40 nm. The heat of fusion is 25-50 J/g. The polymeric matrix includes a polymer. The polymer has 8.75-12 wt.% unreacted isocyanate with a stoichiometric ratio of alcohol or amine to isocyanate of 97-125 %.