| 摘要 |
A method of making a semiconductor device includes forming shallow trench isolation structures (14) in a semiconductor device layer. The shallow trench isolation structures are U- or O- shaped enclosing field regions( 28) formed of the semiconductor device layer which is doped and/or suicided to be conducting. The semiconductor device may include an extended drain region (50) or drift region and a drain region (42). An insulated gate (26) may be provided over the body region. A source region (34, 40) may be shaped to have a deep source region (40) and a shallow source region (34). A contact region (60) of the same conductivity type as the body may be provided adjacent to the deep source region (40). The body extends under the shallow source region (34) to contact the contact region (60).
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