| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory integrated circuit device, in which the magnitude of an on-cell current during a read operation is increased. SOLUTION: The non-volatile integrated circuit device includes; a semiconductor substrate having a plurality of rectangular field regions, in which the short and long sides of each rectangular field region are parallel to the row and column directions of a matrix, respectively; word lines and select lines extending in parallel to the row direction on the semiconductor substrate, wherein the word lines cross each rectangular field region disposed in the row direction, the select lines partially overlap each rectangular field regions arranged in the row direction, and the parts of the long sides of the overlapped field regions and the short sides of the field regions are located below the select lines; a floating junction region formed within the semiconductor substrate between these lines; a bit line junction region formed to the word lines opposite to the floating junction region; and a common source region formed to the select lines opposite to the floating junction region. COPYRIGHT: (C)2008,JPO&INPIT
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