发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve workability by eliminating the need of evaluation for obtaining a set value whenever process condition is changed when a resistive heater is subjected to power control by a set value. SOLUTION: A treatment object is heated to a set temperature by supplying electric power according to an operation amount to a resistive heater in a temperature control mode, and electric power according to a first set value is supplied to the resistive heater by switching to a first power control mode and the treatment object is heated. The treatment object is subjected to temperature rise also from a lamp heater in parallel with a power control process, and the treatment object is treated at a treatment temperature. A second power control mode which is different from the first power control mode judges whether or not the control mode is switched to the first power control mode in temperature control (step 30); and in the case judged not to be switched, when the treatment temperature is stable at the set temperature (step 42), an operation amount of the temperature control mode in stable time is automatically obtained (step 43), the control mode is switched to the second power control mode, and the automatically obtained operation amount is made a second set value, thus controlling a resistive heater (steps 44, 32). COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007311618(A) 申请公布日期 2007.11.29
申请号 JP20060140157 申请日期 2006.05.19
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SATO TAKEO
分类号 H01L21/31;C23C16/46;C23C16/52 主分类号 H01L21/31
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