| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin-film transistor which can improve in-plane uniformity. SOLUTION: A conductive layer 63 of an MoW layer is formed on a silicon oxide layer 62 formed on a polysilicon layer 61. A resist is formed on a region used as a gate electrode 19 of the conductive layer 63. Dry etching is executed using the resist as a mask. The silicon oxide layer 62 can be dry-etched continuously to the dry etching of the conductive layer 63 without changing an etching gas. All the portions protruding outside from the gate electrode 19 of the silicon oxide layer 62 can be removed by dry etching. Impurities can be ion-doped to a portion to be used as a source region 12 and a drain region 13 of the polysilicon layer 61 without allowing the impurities to permeate the silicon oxide layer 62. COPYRIGHT: (C)2008,JPO&INPIT
|
