| 摘要 |
A method of manufacturing a flash memory device which an etch-prevention layer, first and second interlayer insulating layers, and first, second and third hard mask layers are sequentially formed on a semiconductor substrate. The third hard mask layer is etched to expose a portion of a region on the second hard mask layer. A photoresist pattern of a line shape is formed on the entire surface such that the photoresist pattern is exposed to be narrower than the region through which the second hard mask layer is exposed. The second hard mask layer is etched using the photoresist pattern as a mask. The first hard mask layer is etched using the photoresist pattern as a mask, and the second and first interlayer insulating layers are then etched using the remaining third and second hard mask layers as masks, thus forming a drain contact hole having a square shape. The etch-prevention layer is etched using the remaining second and first hard mask layers as masks, thereby exposing a predetermined region of the semiconductor substrate and opening the drain contact hole. It is thus possible to improve a bridge occurring between the contacts.
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