| 摘要 |
Embodiments herein present a structure, method, etc. for making high density MOSFET circuits with different height contact lines. The MOSFET circuits comprise a contact line (500, 1300), a gate (310, 1210) situated proximate the contact line (500, 1300). The contact line (500, 1300) comprises a height that is less than the height of the gate (310, 1210). The MOSFET circuits further comprise gate spacers (710, 715, 1610, 1615) situated proximate the gate (310, 1210) and no contact line spacer situated proximate the contact line (500, 1300) and between the contact line (500, 1300) and the gate (310, 1210). |
