发明名称 Method for releasing substrate wafer from combination of two substrate wafers has adhesive layer placed between them, involves applying of pressure with separating device against lateral edges of one of two substrate wafers
摘要 <p>The method involves applying of pressure with a separating device (4) against lateral edges of one of the two substrate wafers (10,12). A gap is produced between the substrate wafers. A gas is blown into the gap to release one of the substrate wafers fully from the other substrate wafer, such that the adhesive layers (11,14) remains fully at the other substrate wafer. An independent claim is also included for a device for releasing a substrate wafer from a combination of two substrate wafers.</p>
申请公布号 DE102006024209(A1) 申请公布日期 2007.11.29
申请号 DE20061024209 申请日期 2006.05.23
申请人 STEAG HAMATECH AG 发明人 KERN, THOMAS;MAHNER, BERND;MOESNER, FRANK;REINHOLD, TIL
分类号 G11B7/26 主分类号 G11B7/26
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