| 发明名称 |
EMBRITTLEMENT-RESISTANT SILICIDE TARGET FOR DEPOSITING GATE OXIDE FILM AND METHOD FOR PRODUCING THE SILICIDE TARGET |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicide target which is excellent in embrittlement resistance and suitable for depositing a ZrO<SB>2</SB>-SiO<SB>2</SB>or HfO<SB>2</SB>-SiO<SB>2</SB>film that can be used as a high dielectric gate insulating film having properties to substitute a SiO<SB>2</SB>film; and to provide a method for producing the same. <P>SOLUTION: The silicide target excellent in embrittlement resistance and suitable for depositing a gate oxide film is composed of MSi<SB>0.8-1.2</SB>(M:Zr, Hf) and free of free Si and has a relative density of ≥99% and an average crystal grain diameter of ≤30 μm. <P>COPYRIGHT: (C)2008,JPO&INPIT |
| 申请公布号 |
JP2007308803(A) |
申请公布日期 |
2007.11.29 |
| 申请号 |
JP20070158630 |
申请日期 |
2007.06.15 |
| 申请人 |
NIKKO KINZOKU KK |
发明人 |
ODA KUNIHIRO;MIYASHITA HIROHITO |
| 分类号 |
C23C14/34;C04B35/58;H01L21/316 |
主分类号 |
C23C14/34 |
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