| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid state imaging element capable of performing a good imaging even with a low bias voltage in the solid state imaging element having a photoelectric conversion device constituted by sandwiching an organic photoelectric conversion layer between a pair of electrodes. <P>SOLUTION: The solid state imaging element is equipped with: the photoelectric conversion device having a lower electrode formed in an upper part of a semiconductor substrate, an upper electrode formed in an upper part of the lower electrode, and an interlayer including the organic photoelectric conversion layer formed between the lower electrode and the upper electrode; and a signal reader which outwardly reads out a signal corresponding to a signal charge occurring in the photoelectric conversion device. When a bias voltage of 0.1 V or more and 3 V or less is applied between the lower electrode and the upper electrode to perform the imaging, an external quantum efficiency becomes 1% or more in a wavelength region of a light absorbed in the organic photoelectric conversion layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
