| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element along with its manufacturing method capable of improving light taking-out efficiency. <P>SOLUTION: The nitride semiconductor light emitting element comprises a substrate, a first n-type nitride semiconductor layer stacked on the substrate, a light emitting layer, a p-type nitride semiconductor layer, and a second n-type nitride semiconductor layer. The first n-type nitride semiconductor layer, the light emitting layer, the p-type nitride semiconductor layer, and the second n-type nitride semiconductor layer are stacked in this order from the substrate side. <P>COPYRIGHT: (C)2008,JPO&INPIT |
