发明名称 CRYSTAL SILICON DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a crystal silicon device where crystallinity and size adjustment of nano-Si are improved, and desired visible light can be drawn out with high efficiency. <P>SOLUTION: The crystal silicon device has a structure where a single crystal silicon substrate 10, and a plurality of nano-Si poles (almost cylindrical crystal silicone) 16 which stand perpendicularly so that they may have the same crystal plane orientation as a main surface, are sandwiched with a transparent electrode 19 which is brought into contact with upper faces of the nano-Si poles (almost cylindrical crystal silicone) 16 and a metallic electrode 18. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007311545(A) 申请公布日期 2007.11.29
申请号 JP20060139004 申请日期 2006.05.18
申请人 HITACHI MAXELL LTD 发明人 HONMA HIDEO
分类号 H01L33/04;H01L33/34;H01L33/42;H01L33/44 主分类号 H01L33/04
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