| 摘要 |
<p>A method for fabricating a flash memory device is provided to facilitate an etch process by performing a wet-etch process on layers made of a high dielectric material and by performing a dry etch process using plasma on residual layers. A stack structure is formed on a semiconductor substrate(101), including a tunnel oxide layer(102), a first conductor(103) for a floating gate, a high dielectric layer(104) and a second conductor(105) for a control gate. A hard mask layer(106) is formed on the resultant structure, and the hard mask layer is removed by using a gate mask to form a hard mask layer pattern. A gate electrode is formed by using the hard mask pattern as a mask, and the second conductor is removed to expose the high dielectric layer. An oxide layer spacer(107) is formed on the sidewall of the hard mask layer pattern and the residual second conductor. The exposed high dielectric layer is removed. The exposed first conductor is removed. The high dielectric layer may be made of a high dielectric material like Al2O3, ZrO2, HfO2 and so forth.</p> |
