| 摘要 |
A method for manufacturing a recess gate of a semiconductor device is provided to minimize horns at which charges are concentrated and to improve uniformity of deposition thickness of a gate insulating layer by performing an isotropic etching after forming a recess pattern. A recess pattern(34) is formed on a semiconductor substrate(31) on which an isolation layer(32) is formed. An isotropic etching is performed to eliminate horns generated when the recess pattern is formed. A gate insulating layer is formed on the whole surface including the recess pattern. Bottom power of the isotropic etching is applied less than top power thereof. The top power is 700W to 2000W while the bottom power is 1W to 20W. The isotropic etching is performed by using a mixture of argon gas, oxygen gas, HBr, and Cl2.
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