| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor element which method solves the problem that bit line contact plug portions are short-circuited on pattern formation using a landing plug contact mask and process margin is reduced. <P>SOLUTION: Line patterns that form bit the line contact of a multilayer structure but can be formed relatively easily are used in a bit line formation process, in which a portion serving as a bit line contact area is formed and then the bit line contact is extended above the bit line contact area to form bit line contact holes in one process. This process prevents the problem of short-circuiting between bit line contact plugs, and improves the reliability of the semiconductor element while increasing the process margin of the semiconductor element. <P>COPYRIGHT: (C)2008,JPO&INPIT |
