| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for constantly forming a stable crystalline thin film on a low-temperature or unheated substrate regardless of a state of a target, in a single-cathode magnetron pulse sputtering method or a dual-cathode magnetron pulse sputtering method. SOLUTION: When using the single-cathode magnetron pulse sputtering method, the method for forming the thin film includes controlling the duty ratio of an electric power applied to a target electrode to 60% or less, and controlling a horizontal magnetic field formed right above the target to 30 mT or higher. Alternatively, when using the dual-cathode magnetron pulse sputtering method, the method for forming the thin film includes controlling the duty ratio of an electric power applied to each of the two target electrodes to 40% or less, and controlling a horizontal magnetic field formed right above the target to 30 mT or higher. COPYRIGHT: (C)2008,JPO&INPIT
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