发明名称 PIEZOELECTRIC THIN FILM RESONATOR AND ADJUSTING METHOD OF RESONANCE FREQUENCY THEREOF
摘要 PROBLEM TO BE SOLVED: To adjust the resonance frequency of a piezoelectric thin film resonator in the atmosphere, and to suppress the occurrence of spuriousness due to adjusting. SOLUTION: A mass-adding resist film 19 for adding a mass is formed on a counter region E1 of a piezoelectric thin film resonator 1 contained in a wafer W, so that the resonance frequency F<SB>R</SB>of the piezoelectric thin film resonator 1, being initially surpassing a target frequency F<SB>T</SB>, comes to be the target frequency F<SB>T</SB>or lower. Then, the resist film 19 formed on the counter region E1 of the piezoelectric thin film resonator 1A is irradiated with electromagnetic waves so that the resist film 19 is ablated, for the resonance frequency F<SB>R</SB>to rise up to the target frequency F<SB>T</SB>. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007312157(A) 申请公布日期 2007.11.29
申请号 JP20060139824 申请日期 2006.05.19
申请人 NGK INSULATORS LTD 发明人 OSUGI YUKIHISA
分类号 H03H3/04;H03H9/17 主分类号 H03H3/04
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