| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can prevent junction leak current by removing a secondary defect region considerably damaged by implantation. <P>SOLUTION: In the method of manufacturing the semiconductor device, arsenic for reducing a series resistance is implanted after a contact hole is formed. Thereafter, a side wall film is formed on the side wall of the contact hole. Silicon is etched with the side wall film serving as a mask, so that the region considerably damaged around the position of the projected range of arsenic by implantation is removed while an arsenic region is left immediately under the side wall. <P>COPYRIGHT: (C)2008,JPO&INPIT |
