PHASE CHANGE STORAGE CELL EMPLOYING GeBiTe FILM AS PHASE CHANGE SUBSTANCE FILM, PHASE CHANGE STORAGE DEVICE HAVING SAME, ELECTRONIC SYSTEM HAVING SAME, AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide a phase change storage cell employing an undoped GeBiTe film, doped GeBiTe film, or doped GeTe film having a suitable composition ratio for improving an electrical program speed as a phase change substance film.

SOLUTION: The phase change storage cell comprises an interlayer insulating film formed on a semiconductor substrate and a first electrode and a second electrode provided in the interlayer insulating film. Between the first and second electrodes, a phase change substance pattern is provided. The phase change substance pattern corresponds to the undoped GeBiTe film, the doped GeBiTe film including impurities, or the GeTe film including impurities. The undoped GeBiTe film has a composition ratio in a range surrounded by four points (A1 (Ge 21.43, Bi 16.67, Te 61.9), A2 (Ge 44.51, Bi 0.35, Te 55.14), A3 (Ge 59.33, Bi 0.5, Te 40.17), and A4 (Ge 38.71, Bi 16.13, Te 45.16)) indicated by coordinates on a triangular composition diagram having vertices of germanium (Ge), bismuth (Bi), and tellurium (Te).

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