| 摘要 |
<P>PROBLEM TO BE SOLVED: To contrive the miniaturization of a semiconductor light emitting device by raising efficiency in light emission in the device having an overvoltage protective function. <P>SOLUTION: The semiconductor light emitting device with the overvoltage protective function has a silicon semiconductor substrate (1), a main semiconductor region (2) for a light emitting element, a first electrode (3), and a second electrode (4). The silicon semiconductor substrate (1) has a protective element formation region (7). The first electrode (3) has a bonding pad (20). As seen in a plane, the protective element formation region (7) is arranged inside the bonding pad (20). A light-permeable insulating film (19) and an insulating film (17) are arranged on the main semiconductor region (2). Holes (17b) are formed in the insulating film (17). The bonding pad (20) is connected to the light-permeable insulating film (19) with the use of a band shape connection conductive layer (22) which is formed to include the holes (17b). <P>COPYRIGHT: (C)2008,JPO&INPIT |
