| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and apparatus for growing an aluminum nitride monocrystal boule. <P>SOLUTION: A crystal growth setup within a physical vapor transport growth furnace system for producing an AlN monocrystal boule 8 at high temperatures includes a crucible 6 effective to contain an AlN source material 7 and a growing AlN crystal boule 8. This crucible 6 has a thin wall thickness (t<SB>1</SB>) in at least a portion 23 that houses the growing AlN crystal boule 8. Other components include a susceptor, in the case of an inductive heating, or a heater, in the case of a resistive heating, a thermal insulation enclosing the susceptor or heater effective to provide a thermal gradient inside the crucible 6 in the range of 5-100 °C/cm and a furnace chamber capable of being operated from a vacuum (<1.33×10<SP>-5</SP>MPa(<0.1 torr)) to a gas pressure of at least 0.533 MPa (4,000 torr) through filling or flowing a nitrogen gas or a mixture of nitrogen gas and argon gas. <P>COPYRIGHT: (C)2008,JPO&INPIT |
