发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To obtain a light-emitting element that can prevent migration by using an electrode material having a high reflectance for the light of the light-emitting element, and has excellent reliability, an optical reflectance, light extraction efficiency and an optical output. <P>SOLUTION: The light-emitting element comprises first and second electrodes 20 and 30 arranged on the same surface side on first and second conductivity type semiconductor layers 11 and 13, respectively, and the first electrode comprises on an electrode forming surface a first base point 23 and a first extension part 24 extending from the first base point, and a plurality of external connecting parts 31 of the second electrode 30 that are divided from each other and arranged in parallel to the drawing direction. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007311764(A) 申请公布日期 2007.11.29
申请号 JP20070058866 申请日期 2007.03.08
申请人 NICHIA CHEM IND LTD 发明人 INOUE YOSHIKI;SANO MASAHIKO
分类号 H01L33/32;H01L33/38;H01L33/40;H01L33/60;H01L33/62 主分类号 H01L33/32
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