| 摘要 |
A semiconductor device having in a deep hole formed in a first interlayer insulating film a memory cell region that comprises a plurality of capacitors having a lower electrode 229 composed of a crown structure having an outside face and inner face, a first upper electrode 231 facing the outside face of the lower electrode, and a dielectric and a second upper electrode extending from the inner face of the lower electrode to the surface of a first interlayer insulating film other than the deep hole; wherein the first upper electrode is connected to the second upper electrode by connecting a first upper electrode 227 formed on the inner wall of the deep hole to the wiring 241 a via a conductor film 224 and a conductor plug 236 a, and connecting a second upper electrode 231 to be a plate to a wiring 241 a via a conductor plug 239 a.
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