| 摘要 |
A semiconductor memory device and a driving method thereof are provided to improve write operation speed without increasing the size of a write driver and to improve write recovery time characteristics as reducing write operation time. A bit line sense amplifier unit senses and amplifies data loaded on a pair of bit lines. A voltage line driving unit drives a voltage line of the bit line sense amplifier unit. A driving control unit controls the voltage line driving unit in response to a sense amplifier enable signal. A sense amplifier enable signal generation unit generates the sense amplifier enable signal. The sense amplifier enable signal is enabled in a period defined by an active command signal and a precharge command signal and is temporarily disabled for an expected period in a write operation period.
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