| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor photodetector that detects only ultraviolet light or light of a shorter wavelength with extremely high photosensitivity, and also, can be easily manufactured without using a p-type layer. <P>SOLUTION: The semiconductor photodetector is composed by providing a second semiconductor layer 3, whose band gap is larger than that of a first semiconductor layer 2 on the first semiconductor layer 2; a third semiconductor layer 4 whose band gap is smaller than that of the second semiconductor layer 3 and larger than photon energy corresponding to the shortest wavelength of visible light, and which forms a type I hetero-junction together with the second semiconductor layer 3 on the second semiconductor layer 3; a first electrode 5 on the first semiconductor layer 2; and a second electrode 6 on the third semiconductor layer 4. Electron holes, which are generated by optical absorption performed by the third semiconductor layer 4 during operation, are accumulated on the interface between the third semiconductor layer 4 and the second semiconductor layer 3. <P>COPYRIGHT: (C)2008,JPO&INPIT |
