| 摘要 |
A method of manufacturing a flash memory device includes forming a gate over a semiconductor substrate in which a cell region, a low voltage region and a high voltage region are defined. First ions are implanted into the cell region to form doped junctions in the cell region, the low voltage region and the high voltage region being covered to prevent the first ions from being implanted into the low voltage region and the high voltage region. The first ions implanted into the cell region are activated using a rapid annealing process. The rapid annealing process is performed for no more than 10 minutes. The rapid annealing process minimizes an occurrence of Transient Enhanced Diffusion at the cell region.
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