| 摘要 |
A non volatile memory device architecture, suitable for speeding up and synchronize the programming steps of the cells in particular of the Flash-Nor type, of the type comprising a matrix of memory cells organized into rows and columns, at least one group of these columns being selected by at least one first enable signal by a second enable signal generated by a first decoder; the group of columns being associated with at least one Program Load PL controlled by a logic circuit comprising a first centralized portion and plural second portions associated with a respective program load sequentially updated and driven in a synchronous way to the first centralized portion.
|
