| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure and a method for forming a CMOS device having silicide to which endogenous stress is added by using a silicon-nitride-cap. <P>SOLUTION: First, a metal layer comprising silicide metal M is formed on the S/D region of an FET, and then an S/D metal silicide layer comprising metal silicide (MSi<SB>x</SB>) of a first phase is formed by carrying out a first annealing step. Then, a silicon-nitride layer is formed on the FET, and then a second annealing step is carried out. During the second annealing step, the phase of metal silicide is converted from the first phase (MSi<SB>x</SB>) to a second phase (MSi<SB>y</SB>), where x<y. Metal silicide conversion causes the contraction or expansion of volume in the S/D metal silicide layer of the FET. As a result, endogenous tensile stress or compressive stress is generated in the S/D metal silicide layer confined by the silicon-nitride layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
