| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting device which can improve the extraction efficiency of light as well as the injection efficiency of light by reducing the quantity of invalid current that does not contribute to the extraction of light; and to provide a method of manufacturing the same. <P>SOLUTION: The nitride semiconductor light emitting device 1000 includes a conductive substrate 1, a conductive adhesive layer formed on the conductive substrate, and a nitride semiconductor layer laminated structure formed on the conductive adhesive layer. The nitride semiconductor layer laminated structure includes a first conductive nitride semiconductor layer, a light emitting layer, and a second conductive nitride semiconductor layer in this order; a non-conductor layer is formed in part of the surface of the nitride semiconductor laminated structure; and an electrode layer is formed on the surface of the nitride semiconductor layer laminated structure, in a manner to cover the surface of a non-conductor layer. The method is used to manufacture such the nitride semiconductor light emitting device 1000. <P>COPYRIGHT: (C)2008,JPO&INPIT |
