| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of fabricating image sensors, in which the number of masks can be reduced. <P>SOLUTION: A method of fabricating an image sensor includes: providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a PPD (pinned photo diode); primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the plurality of gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the PPD on the surface of the light-receiving region. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
