发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FOR COMMUNICATION
摘要 PROBLEM TO BE SOLVED: To protect two or more internal circuits (ICs) which process signal ranging from high frequency band to low frequency band, from electrostatic discharge by positive and negative static electricity. SOLUTION: A protective circuit of two or more multi-stage connection transistors in diode connection with small parasitic capacitance and no possibility of malfunction, even if input signal more than power supply voltage is applied, is assembled in the internal circuit operated at high frequency band, while a protective circuit made up of a transistor in one diode connection is assembled in the internal circuit operated at low frequency band. Then, the protective circuit has two system protective circuit structure, in which directions of current flows of protective current are reversed mutually even for positive and negative static electricity. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007311813(A) 申请公布日期 2007.11.29
申请号 JP20070166494 申请日期 2007.06.25
申请人 RENESAS TECHNOLOGY CORP 发明人 TAKIGAWA KUMIKO;TANAKA SATOSHI;KASAHARA MASUMI
分类号 H01L21/822;H01L21/8222;H01L21/8238;H01L21/8248;H01L27/04;H01L27/06;H01L27/08;H01L27/092 主分类号 H01L21/822
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