发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device and its manufacturing method, wherein the semiconductor device is hardly deformed or destroyed even when it is subjected to external force. SOLUTION: The semiconductor device comprises a plurality of wiring electrodes 3 provided on a semiconductor substrate 1, and air bridge electrodes 6 each provided between predetermined wiring electrodes among the plurality of the wiring electrodes 3. For connection between the wiring electrode 3 and the air bridge electrode 6, a dug part 3b is formed in the wiring electrode 3 and a connection 6b of a leg of the air bridge electrode 6 is embedded in the dug part 3b. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007311602(A) 申请公布日期 2007.11.29
申请号 JP20060139879 申请日期 2006.05.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 ANDO NAOTO
分类号 H01L21/768;H01L23/522 主分类号 H01L21/768
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