| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method capable of obtaining a semiconductor device excellent in characteristics by preventing generation of a vertical growing face on an end face of an epitaxial growth layer without suppressing impurity concentration. SOLUTION: In the manufacturing method of the semiconductor device provided with a source/drain made of an epitaxial growth layer on a semiconductor substrate near a gate electrode, the gate electrode 3a is formed on the semiconductor substrate 1 made of silicon via a gate insulating film 2a, and a TEOS sidewall 5 is formed on the gate insulating film 2a and a side wall of the gate electrode 3a. The surface layer of the semiconductor substrate 1 exposed from the gate electrode 3a and the TEOS sidewall 5 is subjected to preprocessing based on a surface gas etching reaction in which processing of supplying a hydrofluoric acid gas and an ammonia gas and thermal processing are executed, thereby removing a natural oxidation film 6. After that, an extension region 7 of the source/drain is epitaxially grown on the exposed surface of the preprocessed semiconductor substrate 1. COPYRIGHT: (C)2008,JPO&INPIT
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