| 摘要 |
A method for manufacturing a semiconductor device according to the present invention includes the steps of providing a semiconductor substrate in which an element isolation region and active regions surrounded by the element isolation region are formed, forming a plurality of conductive lines disposed such that the conductive lines cross the active regions, forming an insulating film over the entire surface including the conductive lines, and etching away the insulating film situated over the active regions between the conductive lines so as to form contact holes. After an anti-etching film is formed to protect the surfaces in the contact holes, wet etching is conducted to remove the insulating film in the contact holes so as to form the contact holes.
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