发明名称 Chemical mechanical polishing pad
摘要 The invention provides a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polymeric matrix having a top polishing surface. The top polishing surface has polymeric polishing asperities or forms polymeric polishing asperities upon conditioning with an abrasive. The polymeric polishing asperities are from a polymeric material having at least 45 weight percent hard segment and a bulk ultimate tensile strength of at least 6,500 psi (44.8 MPa). And the polymeric matrix has a two phase structure, a hard phase and a soft phase with an average area of the hard phase to average area of the soft phase ratio of less than 1.6.
申请公布号 US2007275226(A1) 申请公布日期 2007.11.29
申请号 US20060442077 申请日期 2006.05.25
申请人 KULP MARY JO 发明人 KULP MARY JO
分类号 B32B9/04;B32B3/26;B32B27/20 主分类号 B32B9/04
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