发明名称 |
METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL |
摘要 |
<p>A method for the production of an SiC single crystal includes the steps of growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal, disposing the first SiC single crystal grown on the first seed crystal in a direction parallel or oblique to the first direction of growth and cutting the disposed first SiC single crystal in a direction of a major axis in a cross section perpendicular to the first direction of growth to obtain a second seed crystal, using the second seed crystal to grow thereon in a second direction of growth a second SiC single crystal to a thickness greater than a length of the major axis in the cross section, disposing the second SiC single crystal grown on the second seed crystal in a direction parallel or oblique to the second direction of growth and cutting the disposed second SiC single crystal in a direction of a major axis in a cross section perpendicular to the second direction of growth to obtain a third seed crystal, using the third seed crystal to grow thereon a third SiC single crystal, and cutting the third SiC single crystal grown on the third seed crystal in such a manner as to expose a {0001} crystal face, thereby obtaining an SiC single crystal. The method enables the crystal to be enlarged efficiently without impairing crystallinity.</p> |
申请公布号 |
WO2007135965(A1) |
申请公布日期 |
2007.11.29 |
申请号 |
WO2007JP60169 |
申请日期 |
2007.05.10 |
申请人 |
SHOWA DENKO K.K.;OYANAGI, NAOKI;SYOUNAI, TOMOHIRO;SAKAGUCHI, YASUYUKI |
发明人 |
OYANAGI, NAOKI;SYOUNAI, TOMOHIRO;SAKAGUCHI, YASUYUKI |
分类号 |
C30B29/36;C30B23/00 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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