| 摘要 |
A substrate processing method and a manufacturing method of a semiconductor apparatus are provided to manufacture a semiconductor apparatus accurately which has a chip-on-chip structure provided with a via for connecting interlayer. A side surface of a substrate to be treated(21) is joined to a supporting substrate(29). The supporting substrate is removed from the substrate to be treated by polishing. When joining the supporting substrate to the substrate to be treated, a joint bump(27) which is formed on the substrate to be treated is dissolved. The other side of the substrate to be treated is polished to reduce thickness of the substrate to be treated. |
