A METHOD FOR MANUFACTURING POLYCRYSTAL SILICON THIN FILM

摘要

A polycrystalline silicon thin film is provided to reduce a metal pollution remarkably caused by a direct contact of an amorphous material and a metal by diffusing the metal using a cover layer installed between the amorphous material and the metal. An amorphous silicon layer(30) is deposited on an insulating substrate(10). A first cover layer(40) is formed on the amorphous silicon layer. A metal(50) is formed on the first cover layer. A polycrystalline silicon thin film(31) is formed by heating the amorphous silicon layer to be crystallized. Remaining metal contained within the silicon thin film is removed by removing the first cover layer and the metal, forming a second cover layer(60) on the polycrystalline thin film, and then performing the heat treatment.