| 摘要 |
A method for manufacturing an MIM capacitor of a semiconductor device is provided to simplify a manufacturing process by performing simultaneously patterning processes forming an electrode via hole and a trench. A diffusion barrier(20) and a first insulating layer(100) having a thickness of 4000 to 6000 angstrom are formed on a semiconductor substrate(1) including a lower metal line(10). A lower conductive layer(30), a dielectric layer(40), an upper conductive layer(50), and an etch-stop layer(60) are deposited on the semiconductor substrate. An upper metal electrode is formed by patterning the etch-stop layer and the upper conductive layer. A lower metal electrode is formed by patterning the dielectric layer and the lower conductive layer. A second insulating layer(200) is deposited and planarized. A via contact hole is patterned. A trench pattern and an electrode via contact hole are patterned. A barrier metal and a copper seed layer are deposited. A metal line is formed by performing an electrochemical plating process and a chemical mechanical polishing process.
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