SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

摘要

A semiconductor device and a manufacturing method of the same are provided to suppress deterioration of performance due to lateral diffusion in a PMOS. A gate insulating layer and a gate are sequentially formed on a substrate. A pocket ion implantation region(140) is formed at both sides and a lower side of the gate. An LDD ion implantation region is formed between the pocket ion implantation region and the surface of the substrate. A spacer is formed at both sides of the gate. A deep source/drain region(160) is formed by implanting BF2 and indium into the substrate of both sides of the spacer. The indium is implanted into a shallow place in comparison with the BF2. The deep source/drain region is formed in the depth of 50 to 100nm from the surface of the substrate.