发明名称 SUBSTRATE FOR MOUNTING SEMICONDUCTOR ELEMENT WITH STRESS RELAXATION LAYER AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a package substrate for mounting a semiconductor element with favorable connection reliability, and provide a substrate for mounting a semiconductor element with a stress relaxation layer that is advantageous in terms of the formation of fine wiring, electrical characteristics and manufacturing cost, and its manufacturing method. SOLUTION: A substrate for mounting a semiconductor element with a stress relaxation layer has the stress relaxation layer with a thickness of 0.5 to 40μm having an elastic modulus of 3 GPa or smaller and an elongation percentage of 5% or lower between copper foil and a prepreg. The stress relaxation layer is characterized by comprising a resin composition containing (A) an epoxy resin, (B) a high molecular component, (C) an epoxy resin curing agent, and (D) a hardening accelerator. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007305963(A) 申请公布日期 2007.11.22
申请号 JP20070019069 申请日期 2007.01.30
申请人 HITACHI CHEM CO LTD 发明人 OGAWA NOBUYUKI;KAMIYAMA KENICHI;TANABE TAKAHIRO;ONOZEKI HITOSHI
分类号 H05K1/03;B32B15/08;B32B15/092;H01L23/12;H01L23/14 主分类号 H05K1/03
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