| 摘要 |
Herein are described layouts of test structures and scanning methodologies that allow large probe currents to be used so as to allow the detection of resistive defects with a resistance lower than 1 MOmega while at the same time allowing a sufficient degree of localization to be obtained for root cause failure analysis. The detection of resistances lower than 1 MOmega nominally requires a probe current greater than 1 micro ampere for detection on an electron beam inspection system.
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