DETECTION METHOD OF DEFECT CAUSED BY CHEMICAL SOLUTION, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a detection method of a defect caused by chemical solution capable of detecting foreign matter in the chemical solution causing such a fine defect undetectable by a conventional defect inspection device of a resist pattern.

SOLUTION: This detection method of the defect caused by the chemical solution includes: a step (step S101) for applying the chemical solution onto the surface of a mask; a step (step S102) for performing enlarged projection exposure onto a resist film formed on the surface of an inspection substrate by irradiating the mask whereupon the chemical solution is applied with an exposure beam; a step (step S103) for performing defect inspection to the resist film subjected to the enlarged projection exposure; and a step (step S104) for determining whether an inspection result satisfies a standard determined beforehand or not.

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