SUSCEPTOR AND METHOD OF MANUFACTURING SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a susceptor that prevents a contact mark from being formed on the principal rear surface of a substrate, and also to provide a method of manufacturing a semiconductor wafer. SOLUTION: A susceptor 1 supports a semiconductor wafer W during a vapor phase epitaxy process in which the semiconductor wafer W is heated from both the principal front surface side and the principal rear surface side. The susceptor 1 has a countersink 2 for positioning the supported semiconductor wafer W with respect to the susceptor 1. The bottom 22a of the countersink 2 becomes deeper gradually from the edge to the center so that the warped semiconductor wafer W will not come into contact with the bottom 22a during heating for vapor phase epitaxy. The maximum distance D between the bottom 22a and the semiconductor wafer W is 0.35 mm or greater and smaller than 0.45 mm with the semiconductor wafer W supported and not heated. COPYRIGHT: (C)2008,JPO&INPIT