| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of protecting a metal wiring unit of a peripheral circuit against damage, when an intralayer lens is formed in a pixel unit. SOLUTION: When the semiconductor device with a semiconductor substrate 10, and a pixel unit 21 with an intralayer lens and a peripheral circuit 11 with a metal wiring unit 13 that are both formed on the semiconductor substrate 10 is manufactured, insulating film 14 are formed at the pixel unit 21 and the peripheral circuit 11 to cover the metal wiring unit 13, a lens material layer 15 for forming the intralayer lens is laminated on the insulating film 14, a resist layer 16 is formed for use in etching the lens material layer 15, and after the resist layer 16 is hardened, and a region in which the resist layer 16 is thicker than the other resist layer 16 in the pixel unit 21 side region is formed on the peripheral circuit 11 of the resist layer 16. COPYRIGHT: (C)2008,JPO&INPIT
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