Methods and apparatus for fabricating semiconductor devices having reduced implant contamination and related devices

摘要

A method of fabricating a semiconductor device includes selecting an element for implanting into a substrate. The element has at least a first isotope and a second isotope. At least one implant contaminant is identified as having a particle weight that is substantially identical to an atomic weight of the first isotope of the element. As such, ions of the second isotope of the element are selectively implanted into a region of the substrate. The second isotope has an atomic weight that is different from the particle weight of the at least one implant contaminant. For example, the selected element may be silicon (Si), the implant contaminant may be nitrogen (N₂), the first isotope having the substantially identical atomic weight may be silicon-28, and the second isotope having the different atomic weight may be silicon-29. Related methods, apparatus, and devices are also discussed.