| 摘要 |
A semiconductor device is disclosed. The device has a first and second electrode formed in a semiconductor substrate. The first and second electrode are separated from each other by a semiconductor region. and the device also includes a third electrode for controlling conductivity of the semiconductor region. At least one of the first and second electrodes forms a rectifying contact with the semiconductor region. The rectifying contact has a potential barrier. The semiconductor region is uniformly doped, at least in a direction between the first and the second electrodes, to have a doping level higher than the doping level of the semiconductor substrate and so as to, in operation, induce an image-force mechanism for lowering the potential barrier of the at least one rectifying contact.
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