| 发明名称 |
MULTIPLE LEVEL PROGRAMMING IN A NON-VOLATILE MEMORY DEVICE |
| 摘要 |
The programming method of the present invention minimizes program disturb in a non-volatile memory device by initially programming a lower page of a memory block. The upper page of the memory block is then programmed.
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| 申请公布号 |
KR20070112224(A) |
申请公布日期 |
2007.11.22 |
| 申请号 |
KR20077022130 |
申请日期 |
2007.09.27 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LI DI |
| 分类号 |
G11C16/04;G11C16/10;G11C16/34 |
主分类号 |
G11C16/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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