SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method of the same are provided to suppress an RSCE(Reverse Short Channel Effect) by forming an RSCE suppressing region between a pocket region and a pocket region. A plurality of isolation layers(20) are formed on an isolation region of a semiconductor substrate(10) by performing an STI(Shallow Trench Isolation) process. A dopant is implanted into the semiconductor substrate between the isolation layer and the isolation layer. A well(30) is formed by performing an annealing process. A gate pattern(40) is formed on the well. A protective oxide layer is formed on a front surface of the semiconductor substrate including the gate pattern. An RSCE(Reverse Short Channel Effect) suppressing region(60) is formed by implanting a fourth group element into a lower part of the gate pattern. A pocket region(80) is formed at both sides of the lower part of the gate pattern around the RSCE suppression region by performing a pocket implantation process. An LDD region(70) contacting the gate pattern is formed on the semiconductor substrate. The protective oxide layer is removed by using an ashing solution. A gate spacer(90) is formed at both sides of the gate pattern.